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| inchange semiconductor product specification silicon npn power transistors 2SC1875 description ? with to-3 package ? high voltage ,high speed applications ? designed for use in large screen color deflection circuits pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 3.5 a i cm collector current-peak 10 a i b base current 1.0 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 2.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1875 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 500 v v cesat collector-emitter saturation voltage i c =2.5a; i b =0.6a 10 v v besat base-emitter saturation voltage i c =2.5a; i b =0.6a 1.2 v i ces collector cut-off current v ce =1500v; v be =0 1.0 ma i cbo collector cut-off current v cb =1000v; i e =0 20 | a i ebo emitter cut-off current v eb =5v; i c =0 20 | a h fe-1 dc current gain i c =0.5a ; v ce =10v 10 35 h fe-2 dc current gain i c =2a ; v ce =10v 5 25 t s storage time 10 | s t f fall time i c =2.5a ; i b1 =-i b2 =0.6a pw=20 | s 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC1875 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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